Abstract
GaNAs/GaAs multiple quantum well (MQW) structures have been grown on GaAs(001) substrates by molecular beam epitaxy (MBE) using modulated N radical beam source under optimized conditions, wherein the amount of N2 gas flow, RF-power and shutter sequence are systematically controlled. Clear and flat GaNAs/GaAs interfaces were observed in the cross-sectional transmission electron microscopy (TEM) measurements. Fine MQW structures originating from the precise control of the modulated N radical beam have been demonstrated as clear satellite peaks from the X-ray diffraction (XRD) measurements and sharp photoluminescence (PL) peaks. The step-like behaviors in the absorption spectra which reflect the density of state in two-dimensional systems, were clearly observed for all MQW samples.
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