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Abstract
A high Hall-effect mobility of 1,250 cm2V1s−1 is achieved in ZrS2 film as a two-dimensional semiconductor. A large-area atomic-layered polycrystalline ZrS2 film was obtained by sputtering and sulfurization. It was confirmed that a layered ZrS2 film on a SiO2/Si substrate was successfully achieved by a high-temperature sputtering and sulfur compensation process. We demonstrated that the Hall-effect mobility and the carrier density were greatly improved to 1,250 cm2V−1s−1 and $8.5 \times 10^{17}$ cm−3, simultaneously. High-mobility two-dimensional ZrS2 film is a strong candidate for advanced MISFETs.
Highlights
Transition metal dichalcogenides (TMDCs; general formula MX2, where M = Mo, W, Sn, Hf, Zr, Pt, etc., and X = S, Se, Te, etc.), which are layered materials, have attracted much attention in recent years
The Raman spectroscopy with a laser wavelength of 532 nm at 1.5 W and the Hall-effect measurements were performed with 10 times per each samples for whole coupon consisting of 2 cm x 2 cm
The electrical properties of the ZrS2 film were enhanced by controlling the sputtering parameters, and a Hall-effect mobility of 1,250 cm2 V−1 s−1and a carrier density of 8.5 x 1017 cm−3 were remarkably achieved
Summary
Transition metal dichalcogenides (TMDCs; general formula MX2, where M = Mo, W, Sn, Hf, Zr, Pt, etc., and X = S, Se, Te, etc.), which are layered materials, have attracted much attention in recent years. They have been reported on high mobility despite atomic-level thickness, a moderate band gap, and unique optical and physical properties [1]–[28]. A zirconium disulfide (ZrS2) film seems to be a suitable candidate, having a calculated mobility of 1,200 cm V−1 s−1, a moderate band gap of 1.08 eV, and good optical characteristics [1], [2], [31]–[33]
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