Abstract
ZrS 2 film with polycrystalline two-dimensional atomic film was performed for large area application. It was confirmed that a layered ZrS 2 film on a SiO 2 /Si substrate was successfully achieved by hightemperature sputtering and sulfur compensation process. We demonstrated that the Hall-effect mobility and the carrier density were greatly improved as 1,250 cm $^{2} V^{-1} s^{-1}$ and $8.5 x10 ^{17}$ cm $^{-3}$, respectively. MISFET applications are expected for future IoT-edge devices.
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