Abstract
In optical sensors, it is desirable to have high gain leading to high sensitivity and high signal to noise ratio (SNR). Conventionally, the most popular approaches are avalanche photomultiplication initiated by impact ionization in an avalanche photodiode and active pixel sensor (APS) with in-pixel amplifier. However, the former requires high electric field which induces high shot noise and the latter needs a multiple-transistor pixel circuit which compromises the fill factor. This paper summarizes our recent work in high gain integrated optical sensors enabled by subthreshold operation of photodiode-gated transistors.
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