Abstract
We show that by using InP for the emitter and collector layers, and a thin high-doped base layer, it is possible to achieve both a high DC current gain and a high maximum frequency of oscillation. We have fabricated InP/InGaAs double heterojunction bipolar transistors (DHBT's) with cutoff frequencies f/sub T/ and f/sub max/ of 92 and 95 GHz, respectively, with a DC current gain of over 100. The maximum cutoff frequencies were 107 and 104 GHz. >
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