Abstract
Complementary inverters using IGZO n-channel and DNTT p-channel source-gated transistors are demonstrated for the first time. They exhibit gain of 368 V V−1, 94% noise margin and matching on-current for relatively similar widths.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
