Abstract
InAs quantum-dot (QD) laser structures are grown on (113)B-oriented InP substrate by gas-source molecular-beam epitaxy. Following an optimized growth procedure, a high density of 1.1×1011cm−2 of uniformly sized QDs is achieved. Broad-area lasers containing three stacked QD layers have been realized and tested. Laser emission on the ground-state transition (λ=1.59μm) is obtained at room temperature (RT), at a threshold current density as low as 190A∕cm2. Ground-state modal gain and transparency current density is measured to be 7cm−1 and 23A∕cm2 per dot layer. Ground-state laser emission is also demonstrated from low temperature (100 K, Jth=33A∕cm2) to high temperature (350 K), exhibiting an insensitive threshold in the [100, 170] K range, and a 55 K characteristic temperature at RT.
Published Version
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