High-Frequency SiC-Based Inverters With Input Stages Based on Quasi-Z-Source and Boost Topologies—Experimental Comparison

Abstract

This paper contains a comparison between three topologies of a three-phase two-level inverter: A quasi-Z-source inverter (qZSI), a voltage-source inverter with a boost converter and a voltage-source inverter with an interleaved boost converter. experimental results obtained from laboratory tests of equivalent 6-kW 100-kHz inverters based on SiC mosfet s and Schottky diodes are provided. The following parameters are compared: Quality of input inductor current and output phase voltage as well as total power losses in the inverters. The results for these parameters are obtained for input voltage ranging from 325 V to almost 600 V (where feasible), for two sets of equivalent modulation methods (two regular methods and two reduced-loss methods), for a couple of characteristic values of deadtime and for the operation both at the maximum value of modulation index and at equal values of voltage across the inverter bridge. Results of the experiments show that the qZSI topology may, at certain conditions, surpass the traditional two-stage inverter topologies in the areas of input inductor current quality, output voltage quality and also power losses (at high values of input voltage). What is needed to obtain that is a careful examination of operating conditions, applied modulation method and deadtime value.