Abstract
Domain switching behavior of sol-gel derived PZT thin films at high frequencies has been investigated for ferroelectric memory applications by measuring P-E hysteresis curves as a function of frequency. The coercive field (Ec ) of the PZT thin films strongly depended on the measuring frequency, nevertheless their remanent polarization was almost independent of it. The domain switching kinetics of PZT thin films could be explained based on the nucleation-controlled model. A guideline to make FeRAM with a high operating speed was proposed based the experimental results obtained.
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