High-frequency four noise parameters of silicon-on-insulator-based technology MOSFET for the design of low-noise RF integrated circuits

G Dambrine,J.-P Raskin,F Danneville,D Vanhoenackel Janvier,A Cappy,J.-P Colinge

doi:10.1109/16.777164

High-frequency four noise parameters of silicon-on-insulator-based technology MOSFET for the design of low-noise RF integrated circuits

G Dambrine, J.-P Raskin + Show 4 more

https://doi.org/10.1109/16.777164

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Journal: IEEE Transactions on Electron Devices	Publication Date: Jan 1, 1999
Citations: 91

Affiliation: Institute of Electronics, Microelectronics and Nanotechnology

#Gate Finger Width #Low Noise Amplifiers + Show 8 more

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Abstract

An exhaustive experimental study of the high-frequency noise properties of MOSFET in silicon-on-insulator (SOI) technology is presented. Various gate geometries are fabricated to study the influence of effective channel length, gate finger width, and gate sheet resistivity on the four noise parameters. The high level of MOSFET sensitivity to the minimum noise matching condition is demonstrated. From experimental results, optimal ways to realize ultra low noise amplifiers are discussed. The capability of the fully depleted standard SOI CMOS process for realizing low-noise amplifiers for multigigahertz portable communication systems is shown.

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