Abstract
A series of (Co2FeSi)1-x(Al2O3)xHeusler alloy films with various Al2O3-doping were prepared by an oblique sputtering method. It is exciting that the as-deposited films exhibit a very high in-plane uniaxial magnetic anisotropy (UMA) field up to 360 Oe and low coercivity of 12 Oe. Consequently, a very high self-bias ferromagnetic resonance frequency in excess of 5.02 GHz was obtained in as-deposited Co2FeSi films without any annealing. The good microwave ferromagnetic performances and the integrated circuits compatible fabrication process of Co2FeSi films make possible application in RF/microwave devices.
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