High‐frequency characteristics of L g = 60 nm InGaAs MOS high‐electron‐mobility‐transistor (MOS‐HEMT) with Al 2 O 3 gate insulator

Abstract

High-frequency characteristics of L g = 60 nm In 0.7 Ga 0.3 As MOS-high-electron-mobility transistor (HEMTs) with a 3 nm aluminium oxide grown by atomic-layer-deposition is reported. Fabricated In 0.7 Ga 0.3 As MOS-HEMTs with L g = 60 nm exhibit subthreshold-swing (SS) = 89 mV/dec., drain-induced-barrier-lowering = 98 mV/V, g m_max = 1.1 mS/μm, f T = 187 GHz and f max = 202 GHz at V DS = 0.5 V. The high-frequency characteristics showed is the best balanced demonstration of f T and f max in the buried-channel indium gallium arsenide MOS-HEMTs, revealing a strong potential of the buried-channel design scheme for future high frequency, low-noise and high-performance logic applications.