Abstract
This paper presents a comprehensive investigation of the frequency response of a monolithic OpAmp-RC integrator implemented in a 4H-SiC bipolar IC technology. The circuits and devices have been measured and characterized from 27 to 500°C. The devices have been modelled to identify that the substrate capacitance is a dominant factor affecting the OpAmp’s high-frequency response. Large Miller compensation capacitors of more than 540pF are required to ensure stability of the internal OpAmp. The measured unit-gain-bandwidth product of the OpAmp is ∼1.1MHz at 27°C, and decreases to ∼0.5MHz at 500°C mainly due to the reduction of the transistor’s current gain. On the other hand, it is not necessary to compensate the integrator in a relatively wide bandwidth ∼0.7MHz over the investigated temperature range. At higher frequencies, the integrator’s frequency response has been identified to be significantly affected by that of the OpAmp and load impedance. This work demonstrates the potential of this technology for high temperature applications requiring bandwidths of several megahertz.
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