High frequency capacitance-voltage technique for the extraction of interface trap density of the heterojunction capacitor: Terman’s method revised

Abstract

In a multi-layer heterojunction system, the interface responsible for trap charging is spatially displaced from the two-dimensional charge gas, in contrast to the typical SiO2/Si capacitor. This displacement causes the effective trap capacitance to occur in a different configuration than that of the SiO2/Si system that Terman originally considered. The adaptation of Terman’s high frequency capacitance-voltage method for interface trap density extraction is developed for the heterojunction multi-layer capacitor.