Abstract
High filling fraction gallium phosphide (GaP) inverse opals were fabricated by atomic layer deposition within the void spaces of silica colloidal crystal templates. Depositions were performed from 400to500°C using trimethylgallium and tris(dimethylamino)phosphine precursors. The resulting films were characterized by optical reflectance, which indicated infiltration as high as 100% of the conformal film growth maximum, corresponding to a volume filling fraction of 0.224. X-ray diffraction measurements confirmed the crystallinity of the film. These results indicate the fabrication of three-dimensional photonic crystals using a III-V optoelectronic material with sufficient dielectric contrast to form a full photonic band gap in the visible.
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