Abstract
AbstractHigh field transport in semiconductor is investigated by the transmission‐reflection formalism. One‐dimensional Boltzmann transport equation (BTE) is solved, without resorting to the relaxation time approximation as well as to the perturbation expansion. In case of elastic scattering without energy relaxation, the current density is proportional to square root of the electric field for a wide range of field. By inclusion of the energy relaxation due to the optical phonon emission, the current density restored the proportionality to electric field, and showed a tendency of saturation in high‐field. The saturation in the high‐field is concluded to be due to the ballistic transmission of carriers through a specific layer located at the beginning of channel. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Published Version
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