Abstract
The effects of high field tunnel electron injection on the electrical properties of Al - thin plasma nitrided SiO 2 films - Si (p-type) structures are studied. Under high field injection, it has been observed that electron trapping, positive charge generation near the Si-SiO 2 interface (slow states) and fast state generation at the Si-SiO 2 interface have taken place. After high temperature N 2 annealing, the nitridation induced electron trap density is considerably decreased. Furthermore, under high field injection the generation rate of both the slow states and the interface states and consequently, the degradation rate of the nitrided oxide films have been also decreased after annealing.
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