Abstract
In this paper, we study theoretically the hot electron transport in two nitride semiconductor solid solutions, InxGa1−xN and InxAl1−xN, in the electric fields up to 30 kV/cm. We calculate the electron drift velocity field dependence at 77 and 300 K for the bulk samples with the electron concentration of 1 × 1018 and 1 × 1019 cm−3 and alloy composition x = 0, 0.25, 0.5, 0.75, and 1.
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