Abstract
The authors report on the influence of Mg acceptor doping on the markedly reduced leakage current characteristics (<5×10−8A∕cm2 at 2MV∕cm) of Ba0.6Sr0.4TiO3 thin films. The suitability of room temperature deposited Mg-doped Ba0.6Sr0.4TiO3 films as gate insulators for low-voltage ZnO thin-film transistors (TFTs) (<6V) was investigated. All room temperature processed ZnO-TFTs on plastic substrates exhibited a high field-effect mobility of 16.3cm2∕Vs and a current on/off ratio of 6.4×104. The threshold voltage and subthreshold swing were 2.8V and 400mV/decade, respectively.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
