Abstract
This study reports the dielectric and leakage current properties of thin films deposited at room temperature by radio-frequency magnetron sputtering. Polycrystalline thin films showed a reasonably high dielectric constant and greatly enhanced leakage current characteristics compared to the leakage current of thin films at 0.4 MV/cm. A bandedge spectroscopic analysis revealed lower conduction bandedge defect states and a greater p-type-like Fermi energy level of compared to the thin films. The suitability of films as gate insulators for low voltage operating thin film transistors (TFTs) was investigated. All room-temperature processed TFTs on plastic substrates exhibited a high field effect mobility of and a current on/off ratio of . The threshold voltage and subthreshold swing were 2 V and 440 mV/dec, respectively. The fabrication and compositional manipulation method of the films described in this work is simple and versatile, providing fascinating opportunities for new high- gate dielectrics.
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