Abstract
In this paper, extraction efficiency in simplified and layered light-emitting diodes (LEDs) of GaN photonic crystal with periodic air holes is studied by three-dimensional finite-difference time-domain method. Photonic band structures of the photonic crystal are obtained by plane-wave expansion method. The results about simplified GaN -LED show that extraction efficiency is very sensitive to the structure parameters tuning, and increases considerably inside the transverse-electric-like gap region. A maximum extraction efficiency above 90% can be achieved. The effects of the PC thickness and air-hole radius on relative extraction efficiency of layered GaN -LED are analyzed. They show optimal values to obtain high relative extraction efficiency.
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