High-energy x-ray photoelectron spectroscopy spectra of SiO2 measured by Cr Kα

Abstract

Silicon oxide (SiO2) grown by rapid thermal oxidation on Si was analyzed using high-resolution high-energy x-ray photoelectron spectroscopy (HAXPES). The HAXPES spectra of SiO2 obtained using monochromatic Cr Kα radiation at 5414.8 eV include two survey scans (Al Kα and Cr Kα) and high-resolution spectra of Si 2p, Si 2s, Si 1s, and O 1s.