Abstract
Titanium nitride (TiN) grown by ionized metal plasma on Si was analyzed using high-resolution high-energy x-ray photoelectron spectroscopy (HAXPES). The HAXPES spectra of TiN obtained using monochromatic Cr Kα radiation at 5414.8 eV include two survey scans (Al Kα and Cr Kα) and high-resolution spectra of Ti 1s, Ti2p, Ti 2s, Ti 3p, Ti 3s, N 1s, and O 1s.
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