Abstract
Silicon nitride (Si3N4) grown by metalorganic chemical vapor deposition on Si was analyzed using high-resolution high-energy x-ray photoelectron spectroscopy (HAXPES). The HAXPES spectra of Si3N4 obtained using monochromatic Cr Kα radiation at 5414.8 eV include two survey scans (Al Kα and Cr Kα) and high-resolution spectra of Si 2p, Si 2s, Si 1s, and N 1s.
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