High energy x-ray photoelectron spectroscopy spectra of Si3N4 measured by Cr Kα

Abstract

Silicon nitride (Si3N4) grown by metalorganic chemical vapor deposition on Si was analyzed using high-resolution high-energy x-ray photoelectron spectroscopy (HAXPES). The HAXPES spectra of Si3N4 obtained using monochromatic Cr Kα radiation at 5414.8 eV include two survey scans (Al Kα and Cr Kα) and high-resolution spectra of Si 2p, Si 2s, Si 1s, and N 1s.