High energy storage efficiency and temperature stability realized in the Ba0.3Sr0.7Zr0.18Ti0.82O3/LaNiO3 heterostructure thin films directly deposited on the conductive Si substrate

Abstract

A high-performance energy storage capacitor would not display high energy storage density (Ue) but high energy storage efficiency (η). However, during raising the electric field (E) or temperature (T), the η in dielectric thin films often shows an obvious degradation process. The degradation process is closely related to the change of the charge carrier transport mechanism as a function of E or T. Compared with the electric breakdown strength, the relationship between η and the charge carrier transport mechanisms in the dielectric thin films was less concerning. In this work, by increasing the trigger E and T of the space charge limited current mechanism, the beginning of the η degradation process was delayed into higher E and T. Consequently, a high Ue (∼56.6 J/cm3) and η (∼93.9%) were achieved simultaneously in Ba0.3Sr0.7Zr0.18Ti0.82O3/LaNiO3 heterostructure thin films directly deposited on low-cost conductive silicon wafers. Moreover, the temperature stability was greatly improved. This result would also offer a promising approach to improve the electrical properties of the dielectric oxide thin films in a harsh environment of high temperatures by redistributing oxygen vacancies through the heterostructure interface.