Abstract
PbZrO3 antiferroelectric films can be used to design the energy storage capacitors for low electric field applications, and the energy storage properties are determined by electric field-induced phase transition. Here we present a simple and effective method to enhance the energy storage properties of PbZrO3 antiferroelectric through ionic pair (with small ionic radius) doping. Li+-La3+ pair induces chemical press when Li+ and La3+ are doped at the Pb2+-sites of PbZrO3. Both the analysis based on the phenomenological model and experiment results show that the critical electric fields corresponding to the field-induced phase transition of PbZrO3 can be enhanced under the compressive stress, which improves the energy storage properties. A maximum energy storage density of 16.2 J/cm3 has been obtained in Pb0.96(Li0.5La0.5)0.04ZrO3 thin films at a low electric field of 600 kV/cm, which is about 1.8 times than that of un-doped PbZrO3 films (9 J/cm3). The results provide an effective approach to design high energy storage properties in ABO3 antiferroelectrics at low electric field.
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