Abstract
Dielectric film capacitors are considered as a potential candidate for advanced power electronics technology due to their fast charging and discharging rate and stability. However, the further improvement of energy storage density is still a major challenge. Herein, a reasonable amorphous structure is applied to the preparation of dielectric film capacitors to improve the dielectric and energy storage properties. The high breakdown strength and energy storage density in the amorphous film are assigned by the disordered structure and intrinsic high insulative for B2O3. As a result, a high discharge energy storage density of 68.64 J cm−3 and an efficiency of 85% can be achieved in the BaTiO3-5wt%B2O3 amorphous thin film at 7.3 MV cm−1, together with excellent thermal stability (20–200 °C) and cyclic stability (up to 105 times) This work provides a paradigmatic method to achieve high energy storage density and stability.
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