Abstract
AlN films were prepared by reactive DC planar magnetron sputtering in atmosphere of N2 gas or mixed gas of N2 and H2. High-energy neutral particles bombarding the AlN film were observed by using a time-of-flight particle analyzer. It is found that the high-energy particles such as NO and OH (or O) due to residual H2O in the discharge chamber or oxides at the Al target surface induce the coloring of film, the decrease of optical transmittance at shorter wavelength, the decrease of the degree of c-axis orientation of the film, etc. For the sputtering in mixed gas of N2 and H2, a number of energetic H atoms are bombarding the AlN film. The influence of these energetic H atoms on the film growth is also studied.
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