Abstract
The lead based ferroelectric PbZr 0.53Ti 0.47O 3 (PZT), (Pb 0.90La 0.10)TiO 3 (PLT10) and (Pb 0.80La 0.20)TiO 3 (PLT20) thin films, prepared by pulsed laser ablation technique, were studied for their response to the 70 MeV oxygen ion irradiation. The dielectric analysis, capacitance–voltage ( C– V) and DC leakage current measurements were performed before and after the irradiation to high-energy oxygen ions. The irradiation produced considerable changes in the dielectric, C– V, leakage characteristics and induced some amount of amorphization. The PZT films showed partial recrystallization after a thermal annealing at 400 °C for 10 min. The phase transition temperature [ T c] of PLT20 increased from 115 °C to 120 °C. The DC conductivity measurements showed a shift in the onset of non-linear conduction region. The current density decreased by two orders of magnitude after irradiation. After annealing the irradiated films at a temperature of 400 °C for 10 min, the films partially regained the dielectric and electrical properties. The results are discussed in terms of the irradiation-induced amorphization, the pinning of the ferroelectric domains by trapped charges and the thermal annealing of the defects generated during the irradiation.
Published Version
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