Abstract
Abstract Box profiles were formed in 4H–SiC epilayers by different combination of multi-energy N+ ion implantations at room temperature, with energy ranges varying from [0.5–2 MeV] to [0.4–4 MeV]. The fluences were adjusted in order to keep a constant plateau concentration between 2 and 3 × 1018 cm−3. Post-implantation annealing were performed at 1650 or 1800 °C up to 45 min in ultra-pure argon atmosphere, to activate the dopants. During this process, some samples were encapsulated with a graphite (C) cap obtained by thermal conversion of a spin-coated AZ5214E photoresist. Both as-implanted and annealed samples were analyzed by Rutherford Backscattering Spectroscopy in channeling mode (RBS/C) with 3.5 MeV He+ beam to quantify the induced damage. Dopant profiles were obtained by Secondary Ion Mass Spectroscopy (SIMS) measurements and compared to Monte–Carlo (MC) simulation.
Published Version
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