Abstract
The beam-induced damage near metal-silicon interfaces of Cu, Al, Ta, Ti and W deposited on Si(111) crystal substrates has been investigated using a MeV He ion scattering/channeling technique. Measurements have been performed on beam-induced changes in the Si interface peak (IP) under irradiation with MeV He ions. The results show that the induced changes can be classified into two categories; in the Ta, Ti and W cases, the effect attributable to the deposited metal was small while in the Cu and Al cases, an appreciable enhancement of the beam irradiation sensitivity was observed. The observed difference cannot be explained only by the differences in mass and atomic number of the overlayer. It seems that the chemical bond nature near the interface can be correlated with the beam-induced damage observed. The possibility is discussed that the beam-induced effect can be useful in detecting the chemical nature at metal-semiconductor junctions.
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