Abstract
Heteroepitaxial ZnO transparent current spreading layers with low sheet resistances were deposited on GaN-based light emitting diodes using aqueous solution phase epitaxy at temperatures below 90°C. The performance of the LEDs was analyzed and compared to identical devices using electron-beam evaporated indium tin oxide transparent current spreading layers. White LEDs with ZnO layers provided high luminous efficacy–157 lm/W at 0.5A/cm2, and 84.8 lm/W at 35A/cm2, 24% and 50% higher, respectively, than devices with ITO layers. The improvement appears to be due to the enhanced current spreading and low optical absorption provided by the ZnO.
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