Abstract
Gallium nitride (GaN) based light emitting diodes (LEDs) with a thick and high quality ZnO film as a current spreading layer grown by metal-source vapor phase epitaxy (MVPE) are fabricated successfully. Compared with GaN-based LEDs employing a Ni/Au or an indium tin oxide transparent current spreading layer, these LEDs show an enhancement of the external quantum efficiency of 93% and 35% at a forward current of 20 mA, respectively. The full width at half maximum of the ZnO (002) ω-scan rocking curve is 93 arcsec, which corresponds to a high crystal quality of the ZnO film. Optical microscopy and atomic force microscopy are used to observe the surface morphology of the ZnO film, and many regular hexagonal features are found. A spectrophotometer is used to study the different absorption properties between the ZnO film and the indium tin oxide film of the GaN LED. The mechanisms of the extraction quantum efficiency increase and the series resistance change of the GaN-based LEDs with ZnO transparent current spreading layers are analyzed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
