Abstract
AbstractSpin–orbit torque (SOT) induced perpendicular magnetization switching in Pt1‐xGdx/Co/Al2O3 heterostructure with x = 0, 0.02, 0.14, 0.30, and 0.33 is investigated. With in‐plane charge current flowing through the Pt1‐xGdx layer, field‐free current‐induced magnetization switching is observed for all nonzero x due to the existence of opposite spin Hall angles (θSHA) from Pt1‐xGdx alloys. Furthermore, the large θSHA of about 0.27 is obtained in the optimal Pt0.70Gd0.30 alloy films, which is about four times larger than that of the pure Pt. This work suggests a simple and scalable method for realizing field‐free SOT switching, and provides potential candidates of spin Hall materials that can be used to produce highly efficient SOTs.
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