High efficiency silicon 1310 nm detector without defect states or heteroepitaxy

Abstract

The Si community has continued to seek low cost, fully complementary metal-oxide-semiconductor compatible optical detection techniques to overcome the interconnect bottleneck facing the electronics world. We demonstrate high internal quantum efficiency 1310 nm detectors using entirely the properties of Si crystal by employing homojunction band structure engineering to tailor the optoelectronic properties of the material. Nearly 100% internal detector quantum efficiency has been obtained. The device concept may find broad applications benefiting from the extended spectral response beyond the limit of bandgap, especially the limit associated with indirect bandgap of the material.