Abstract
AbstractIn this article, a high‐efficiency power amplifier using the novel harmonic control circuit is realized with Si LDMOSFET. This harmonic control circuit has the short impedances for the second‐ and third‐harmonic components, which has been used to design the in/output matching networks. We have demonstrated the fact that the efficiency enhancement effect of the proposed harmonic control circuit is superior to the class‐F or inverse class‐F harmonic control circuit. Also, in case the harmonic control circuit has been used to the input matching network as well as the output matching network, the efficiency of the proposed power amplifier has been improved all the more. The measured maximum power‐added efficiency (PAE) of the proposed power amplifier is 87.1% at 1.71 GHz band. Compared with class‐F and inverse class‐F amplifiers, the measured maximum PAE of the proposed power amplifier has been improved in 9.5–14.3%. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 1873–1876, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24508
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