Abstract
A double sided buried contact (DSBC) silicon solar cell structure is currently developed at the University of New South Wales. This structure provides an improved surface passivation without the use of photolithography. It is bifacial in nature and can be illuminated from both sides. Because of the improved rear passivation, cells have been fabricated using a wide range of substrate resistivity with little variation in performance, especially the open circuit voltage. This paper reports the demonstration of 19% efficiency (measured under AM1.5, 100 mW/cm2, 25°C at the University of New South Wales) for this structure fabricated on 1 Ω·cm, p-type crystalline silicon substrate.
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