Abstract
Electron energy–loss spectroscopy (EELS) equipped on a modern scanning transmission electron microscope is a powerful high resolution elemental analysis technique. However, the conventional method of extracting elemental information quantitatively from EELS spectra is non-trivial. In this article we tried to interpret EELS data from the viewpoint of chemometrics. An EELS spectrum image collected from a vicinal SiC/SiO2 interface was employed as an example. By analyzing the EELS data with sophisticated chemometrics methods, chemical components and elemental ratios of C/Si and O/Si across the interface were derived. Compared with conventional EELS analysis, the chemometrics methods gave more reliable and accurate results with higher calculation efficiency. The chemometrics analysis confirmed that the transition from SiC to SiO2 was chemically sharp, and the transition layer in the vicinal interface was a linear combination of SiC and SiO2. Chemometrics analysis can be a fast and robust complementary method for EELS analysis.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.