High efficiency cadmium free Cu(In,Ga)Se 2 thin film solar cells terminated by an electrodeposited front contact

Abstract

The possibility to reach up to 14.7% efficiency with Cu(In,Ga)Se 2 (CIGS) solar cell, using a cadmium free buffer layer (indium sulphide:In 2S 3) and an electrodeposited front contact (chloride doped ZnO:ZnO:Cl) is demonstrated in this article. This is the first time that costly gas phase deposition processes for ZnO, by high vacuum sputtering, can be replaced by an efficient low cost atmospheric technology, representing an important breakthrough in further cost reduction for photovoltaic application. In addition, the compatibility with cadmium free buffer layers brings this new approach at the cutting edge of strategic evolution of the CIGS technology. In this study the influences of the In 2S 3 buffer layer thickness, the presence of an intrinsic ZnO layer and a soft annealing treatment are studied. It is shown that the growth behavior of the electrodeposited ZnO:Cl is controlled by nucleation phenomena on different surfaces, with a unique morphology on indium sulphide. Finally the best performances have been achieved with a cell annealed at 150 °C under atmospheric conditions containing a very thin In 2S 3 layer (15 nm) but without intrinsic ZnO (CIGS/In 2S 3/ZnO:Cl).