Abstract
A high dynamic range microwave power sensor compatible with the gallium arsenide monolithic microwave integrated circuit process is presented. The power sensor consists of a thermoelectric power sensor and a capacitive power sensor for low and high power detection, respectively. To improve the dynamic range and optimise the impedance matching characteristic, the curled cantilever beam is utilised and the slot width of the coplanar waveguide transmission line is modified. The measured return loss is lower than –25.5 dB at 8–12 GHz. The output of the power sensor shows good linearity with the incident radio frequency power. For the incident power from 0.1 to 100 mW, the obtained sensitivities by a thermoelectric power sensor are about 0.0842, 0.0752 and 0.0701 mV/mW at 8, 10 and 12 GHz, respectively. For the incident power from 100 to 400 mW, the measured sensitivities by the capacitive power senor are about 0.0400, 0.0301 and 0.199 fF/mW at 8, 10 and 12 GHz, respectively.
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