Abstract
A novel high drain efficiency two inverted Doherty amplifier is presented, A carrier amplifier and a peak amplifier are set to asymmetrical drain voltages to extend the power range where a high efficiency of the amplifier is maintained, matching circuits of the carrier amplifier and peak amplifier in the two inverted Doherty amplifier are designed for each drain voltage so that the efficiency and signal linearity of the amplifier at a 6.8dB back-off point from its’ saturated output power (Psat) become higher than those of a conventional amplifier. A Doherty amplifier containing laterally-diffused metal-oxide semiconductor (LDMOS) field-effect transistors (FETs) achieves an adjacent channel leakage power ratio (ACLR) of -30.8dBc and a drain efficiency of 50% at an output power of 49.3dBm.This is the highest drain efficiency of a Doherty amplifier use LDMOS for a WCDMA signal to the best of the authors’ knowledge.
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