Abstract
The submonolayer quantum dots of an infrared photodetector were grown by molecular beam epitaxy in the presence of a very low As flux and a 2 × 4 surface reconstruction in order to effectively nucleate small two-dimensional InAs islands that are required to form such nanostructures. A specific detectivity of 9.2 × 1010 cm Hz1/2 W−1 was obtained at 10 K with a bias of 1.0 V.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
