High-Density Reconfigurable Devices With Programmable Bottom-Gate Array

Abstract

A novel poly-Si reconfigurable device with a programmable bottom-gate (BG) array is demonstrated for the first time. The BG has non-volatile memory functionality. This device is very efficient in terms of device size and functionality. By changing the bias or program/erase state of the BGs, a device can be transformed to a certain device type among ${n}$ -/ ${p}$ -MOSFETs, and ${n}$ - ${p}$ and ${p}$ - $ {n}$ diodes. The threshold voltage ( $ {V}_{\mathsf {th}}$ ) and contact resistance ( ${R}_{\mathsf {c}}$ ) of MOSFETs can be controlled independently by the BGs. The subthreshold swings for ${n}$ -/ ${p}$ -MOSFETs are 200 and 230 mV/decade, respectively. The $ {I}_{ \mathrm{\scriptscriptstyle ON}}/ {I}_{ \mathrm{\scriptscriptstyle OFF}}$ s of the ${n}$ -/ ${p}$ -MOSFETs measured from a single reconfigurable device are more than $10^{6}$ , which are comparable to those of conventional poly-Si devices.