Abstract
Divinylsiloxane-bis-benzocyclobutene (DVS-BCB) has attracted significant attention as an intermediate bonding material, owing to its excellent properties. However, its applications are limited, due to damage to peripheral devices at high curing temperatures and unoptimized compressive pressure. Therefore, it is necessary to explore the compressive pressure condition for DVS-BCB bonding. This study demonstrates an optimization process for void-free DVS-BCB bonding. The process for obtaining void-free DVS-BCB bonding is a vacuum condition of 0.03 Torr, compressive pressure of 0.6 N/mm2, and curing temperature of 250 °C for 1 h. Herein, we define two factors affecting the DVS-BCB bonding quality through the DVS-BCB bonding mechanism. For strong DVS-BCB bonding, void-free and high-density chemical bonds are required. Therefore, we observed the DVS-BCB bonding under various compressive pressure conditions at a relatively low temperature (250 °C). The presence of voids and high-density crosslinking density was examined through near-infrared confocal laser microscopy and Fourier-transform infrared microscopy. We also evaluated the adhesion of the DVS-BCB bonding, using a universal testing machine. The results suggest that the good adhesion with no voids and high crosslinking density was obtained at the compressive pressure condition of 0.6 N/mm2. We believe that the proposed process will be of great significance for applications in semiconductor and device packaging technologies.
Highlights
Owing to the development of the semiconductor industry, bonding wafers with complex structures of semiconductors and micro-electromechanical systems (MEMS) devices without interconnection delay, low adhesive strength, crosstalk, and power dissipation have attracted significant attention [1,2]
The shape and physicochemical properties of divinyl siloxane bis-benzocyclobutene (DVS-BCB) bonding according to the compressive pressure were investigated to determine the optimal void-free DVS-BCB bonding process conditions
We propose the presence of voids and differences in crosslinking density as factors affecting DVS-BCB bonding through the bonding mechanism of DVS-BCB bonding
Summary
Owing to the development of the semiconductor industry, bonding wafers with complex structures of semiconductors and micro-electromechanical systems (MEMS) devices without interconnection delay, low adhesive strength, crosstalk, and power dissipation have attracted significant attention [1,2]. Adhesive bonding is one of the main processes with the advantages of high yield, low cost, high bonding strength, relatively low bonding temperature, wide applicability to various wafer materials, no requirement for electric voltage, and complementary metal–oxide–semiconductor and MEMS compatibility [3,4]. This adhesive wafer bonding uses various polymers, such as polyimide [5], photoresist [6], epoxy [7], and divinyl siloxane bis-benzocyclobutene (DVS-BCB) [8,9] as an intermediate bonding material. DVS-BCB is used in bonding and packaging processes for three-dimensional (3D) integrated circuit [4,15], optical [16,17], and MEMS devices [17,18,19]
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