Abstract
A new Single Flux-Quantum (SFQ) Nondestructive Read-Out (NDRO) random-access asymmetric 2-Josephson-junction interferometer memory cell with only one control line has been investigated and designed. The binary information is stored in the cell nonvolatilely without a bias current. For random access, this is the first known interferometer memory cell without a diagonal line. Therefore, this NDRO SFQ memory cell leads intrinsically to smaller cell area and simpler decoder schemes. A cell design of only 52 lithographic squares is given to demonstrate the potential for high-density memory chips. Wide nominal read and write operating margins are obtained. The NDRO interferometer memory cell proposed is promising for use in a high-performance Josephson computer.
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