Abstract
High-density thin-magnetic-film memory devices using double-layer storage films with NDRO properties were designed and tested. Use of the two double-layer films-one on the bottom and the other on the top of the bit-sense line-produced a structure that allows flux closure in such a way as to make possible a high-density film array. The devices tested were experimental arrays with densities of 4400 bits per cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . Test results agreed well with those predicted from the theoretical model. Static measurements, as well as dynamic worst-case pulse tests for films and storage cells, were conducted, and the resulting signals and operating currents were determined.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call