High-density Nano-scale N-channel Trench-gated MOSFETs Using the Self-aligned Technique

Abstract

We propose a novel process technology for fabricating a very high density n-channel trench-gate metal oxide silicon field effect transistor (MOSFET) by using an oxide spacer and self-aligned techniques. Due to this nano-scale technology, the cell pitch of the trench-gate MOSFET could be reduced to 3.0 {mu}m, which resulted in an increase in the cell density and in current driving capability. By reducing masks to four layers, a cost-effective process was available. The self-aligned technique also permits a narrow width of the trench gate on the scale of 300 nm. The fabricated device exhibits a specific on-resistance of 1.4 m{Omega}{center_dot}cm{sup 2} for a breakdown voltage of 114.8 V. Moreover, the long-term gate oxide's integrity was improved by adopting corner rounding and hydrogen annealing technologies.