Abstract
In this work, we studied etching of resists suitable for nano-imprint lithography. First, various resists have been tested in a SiO 2 process under low pressure and high plasma density conditions in order to get the best SiO 2/resist selectivity. Second, to understand resist etching mechanism and thus optimize the process, we focused our study on polymer etching behavior in different plasma conditions. Finally, transfer of imprinted features in SiO 2 has been successfully achieved.
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