Abstract
Situation in high-electron-mobility transistor (HEMT) technology is discussed. The N-AlGaAs/InGaAs/GaAs pseudomorphic HEMT’s are now considered as most advanced for mmwave monolithic circuits, but metamorphic N-InxAl1−xAs/InyGa1−yAs/InxAl1−xAs HEMT’s grown on GaAs substrates are very promising for the future high-frequency devices. High density 2DEG in HEMT’s is analyzed by means of the Hall effect and photoluminescence measurements. Processing technology of the sub-0.25-µm pseudomorphic HEMT’s, metamorphic HEMT’s and their characteristics are also described.
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