Abstract
An InP MESFET with a 0.8 µm gate length has been fabricated utilizing an active layer grown by LPE on an Fe-doped substrate. The dc transconductance was 22 mS/200 µm and the gain-bandwidth product f <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</inf> had a high value of about 40 GHz. The high value of f <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</inf> is mainly due to the high saturation velocity in the channel, which was extimated to be 2.8 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">7</sup> cm/s.
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